Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Kim, Sang Soo ^a   Cho, Won Ju ^b   Ahn, Chang Geun ^c   Im, Kiju ^c   Yang, Jong Heon ^c   Baek, In Bok ^c   Lee, Seongjae ^c   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Kwangwoon University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY; PHOTOCHEMICAL REACTIONS; PLASMAS; SEMICONDUCTOR JUNCTIONS; SILICON; VAPOR DEPOSITION;

FLOATING GATE MEMORY; MEMORY EFFECT; PHOTOCHEMICAL VAPOR DEPOSITION; PLASMA DOPING;

FIELD EFFECT TRANSISTORS;

EID: 33744810856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208268     Document Type: Article

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