Memory effect in thin films of insulating polymer and C60 nanocomposites

Nanotechnology

Volumn 17, Issue 1, 2006, Pages 145-151

  Paul, S ^a   Kanwal, A ^a   Chhowalla, M ^a  

^a The State University of New Jersey   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTANCE; FULLERENES; NANOSTRUCTURED MATERIALS; POLYMERS; RAMAN SPECTROSCOPY; SANDWICH STRUCTURES; TEMPERATURE DISTRIBUTION; THIN FILMS;

CONDUCTION STATES; INSULATING POLYMERS; METAL-ORGANIC-METAL (MOM);

SHAPE MEMORY EFFECT;

EID: 29144457441     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/1/023     Document Type: Article

References (21)

1. Chen J, Reed M A, Rawlett A M and Tour J M 1999 Large on-off ratios and negative differential resistance in a molecular electronic device Science 286 1550-2
2. Collier C P, Wong E W, Belohradsky M, Raymo F M, Stoddart J F, Kuekes P J, Williams R S and Heath J R 1999 Electronically configurable molecular-based logic gates Science 285 391-4
3. Reed M A, Chen J, Rawlett A M, Price D W and Tour J M 2001 Molecular random access memory cell Appl. Phys. Lett. 78 3735-7
4. Forrest S R 2004 The path to ubiquitous and low-cost organic electronic appliances on plastic Nature 428 911-8
5. Gelinck G H, Genus T C and Leeuw D M D 2000 High performance of all-polymer integrated circuits Appl. Phys. Lett. 77 1487-9
6. Peumans P, Yakimov A and Forrest S R 2003 Small molecular weight organic thin-film photodetectors and solar cells J. Appl. Phys. 93 3693-723
7. Ho P K H, Kim J S, Burroughes J H, Becker H, Li S F Y, Brown T M, Cacialli F and Friend R H 2000 Molecular-scale interface engineering for polymer light-emitting diodes Nature 404 481-4
8. Scott J C 2004 Is there an immortal memory? Science 304 62-3
9. Ma D, Aguiar M, Freire J A and Hummelgen I A 2000 Organic reversible switching devices for memory applications Adv. Mater. 12 1063-6
10. Ma L P, Liu J and Yang Y 2002 Organic electrical bistable devices and rewrittable memory cells Appl. Phys. Lett. 80 2997-9
11. Ma L P, Pyo S, Ouyang J, Xu Q F and Yang Y 2003 Nonvolatile electrical bistability of organic/metal-nanocluster/organic system Appl. Phys. Lett. 82 1419-21
12. Bozano L D, Kean B W, Deline V R, Salem J R and Scott J C 2004 Mechanism for bistability in organic memory elements Appl. Phys. Lett. 84 607-9
13. Möller S, Perlov C, Jackson W, Taussig C and Forrest S R 2003 A polymer/semiconductor write-once read-many-times memory Nature 426 166-9
14. Chu C-W, Ouyang J, Tseng J-H and Yang Y 2005 Organic donor-acceptor system exhibiting electrical bistability for use in memory devices Adv. Mater. 17 1440-3
15. Ouyang J, Chu C-W, Szmanda C R, Ma L and Yang Y 2004 Programmable polymer thin film and non-volatile memory device Nat. Mater. 3 918-22
16. Majumdar H S, Baral J K, Österbacka R, Ikkala O and Stubb H 2005 Fullerene-based bistable devices and associated negative differential resistance effect Org. Electron. 6 188-92
17. Paul S, Pearson C, Molloy A, Cousins M A, Green M, Kolliopoulou S, Dimitrakis P, Normad P, Tsoukalas D and Petty M C 2003 Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures Nano Lett. 3 533-6
18. Bez R, Camerlenghi E, Modelli A and Visconti A 2003 Introduction to flash memory IEEE Proc. 91 489-502
19. 70 by alkali-metal doping Nature 350 320-2
20. Fanchini G, Tagliaferro A, Messina G, Santangelo S, Paoletti A and Tucciaron A 2002 Vibrational properties and microstructure of reactively sputtered hydrogenated carbon nitrides' J. Appl. Phys. 91 1155-65
21. Martin T P and Genzel L 1973 Raman scattering in small crystals Phys. Rev. B 8 1630-5