Improvement of electron transport in a ZnSe nanowire by in situ strain

Journal of Physics D: Applied Physics

Volumn 44, Issue 12, 2011, Pages

  Wang, Y G ^a,b   Zhang, Q L ^a   Wang, T H ^a   Han, W ^c   Zhou, S X ^a,c  

^a HUNAN UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c CENTRAL IRON AND STEEL RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL DIRECTION; BAND GAPS; BEFORE AND AFTER; COMPRESSION AND TENSION; ELECTRICAL PROPERTY; ELECTRON TRANSPORT; I-V MEASUREMENTS; IN-SITU; LONGITUDINAL DIRECTION; SINGLE NANOWIRES; STRESS-INDUCED; THEORETICAL CALCULATIONS; TRANSMISSION ELECTRON MICROSCOPE; ZNSE NANOWIRES;

ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; NANOWIRES; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

TENSILE STRAIN;

EID: 79952957836     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/12/125301     Document Type: Article

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