Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineering

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Toh, Eng Huat ^a   Wang, Grace Huiqi ^a   Lo, Guo Qiang ^b   Chan, Lap ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b AGENCY FOR SCIENCE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; IMPACT IONIZATION; SILICON COMPOUNDS; STRAIN MEASUREMENT; TEMPERATURE DISTRIBUTION; TENSILE STRESS; TRANSISTORS;

ELECTRON TRANSPORT; ROOM TEMPERATURE; STRAIN ENGINEERING;

MOS DEVICES;

EID: 33846199909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430924     Document Type: Article

References (7)

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2. K. Gopalakrishnan, P. B. Griffin, and J. D. Plummer, Tech. Dig. - Int. Electron Devices Meet. 2002, 289.
3. W. Y Choi, J. Y. Song, B. Y. Choi, J. D. Lee, Y. J. Park, and B. G. Park, Tech. Dig. - Int. Electron Devices Meet. 2004, 203.
4. Y.-C. Yeo, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp. 162-163.
5. S. Selberrherr, Analysis and Simulation of Semiconductor Devices (Springer, New York, 1984).
6. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
7. T. Manku and A. Nathan, J. Appl. Phys. 73, 1205 (1993).