Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt-ZnO-Pb (Zr0.2 Ti 0.8) O3 -Pt heterostructures

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Pintilie, L ^a   Dragoi, C ^a   Radu, R ^a   Costinoaia, A ^a   Stancu, V ^a   Pintilie, I ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE VOLTAGE MEASUREMENTS; COUNTER-CLOCKWISE; ELEVATED TEMPERATURE; HETEROSTRUCTURES; HIGHER TEMPERATURES; HYSTERETIC BEHAVIOR; MEMORY DEVICE; MEMORY WINDOW; METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POLARIZATION REVERSALS; PZT; TEMPERATURE RANGE; TEMPERATURE-INDUCED; ZNO;

CAPACITANCE; CRYSTALS; HYSTERESIS; LEAD; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SOL-GEL PROCESS; ZINC OXIDE; ZIRCONIUM;

HETEROJUNCTIONS;

EID: 75749091407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3284659     Document Type: Article

References (21)

1. J. Yu, Z. Hong, W. Zhou, G. Cao, J. Xie, X. Li, S. Li, and Z. Li, Appl. Phys. Lett. APPLAB 0003-6951 70, 490 (1997). 10.1063/1.118190
2. S. Sinharoy, H. Buhay, D. R. Lampe, and M. H. Francombe, J. Vac. Sci. Technol. JVSTAL 0022-5355 10, 1554 (1992). 10.1116/1.578044
3. N. Maffei and S. B. Krupanidhi, J. Appl. Phys. JAPIAU 0021-8979 72, 3617 (1992). 10.1063/1.352303
4. T. Ren, T. Shao, W. Zhang, C. Li, J. Liu, L. Liu, J. Zhu, and Z. Li, Microelectron. Eng. MIENEF 0167-9317 66, 554 (2003). 10.1016/S0167-9317(02) 00965-6
5. S. K. Lee, Y. T. Kim, C. E. Lee, and S. Kim, J. Appl. Phys. JAPIAU 0021-8979 91, 9303 (2002). 10.1063/1.1467629 (Pubitemid 34638056)
6. S. L. Miller and P. J. McWhorterer, J. Appl. Phys. JAPIAU 0021-8979 72, 5999 (1992). 10.1063/1.351910
7. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa, and Y. Tarui, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 33, 5172 (1994). 10.1143/JJAP.33.5172
8. M. Alexe, S. T. Senz, A. Pignolet, D. Hesse, and U. Gosele, Ferroelectrics FEROA8 0015-0193 225, 75 (1999). 10.1080/00150199908009113
9. M. H. Tang, Z. H. Sun, Y. C. Zhou, Y. Sugiyama, and H. Ishiwara, Appl. Phys. Lett. APPLAB 0003-6951 94, 212907 (2009). 10.1063/1.3147859
10. W. Shih, P. Juan, and J. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 103, 094110 (2008). 10.1063/1.2924434 (Pubitemid 351706997)
11. H. Tanaka, Y. Kaneko, and Y. Kato, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 47, 7527 (2008). 10.1143/JJAP.47.7527
12. Y. Kato, Y. Kaneko, H. Tanaka, and Y. Shimada, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 47, 2719 (2008). 10.1143/JJAP.47.2719
13. E. Cagin, D. Y. Chen, J. J. Siddiqui, and J. D. Phillips, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 40, 2430 (2007). 10.1088/0022-3727/40/8/003 (Pubitemid 46778369)
14. Y. S. Kim and C. H. Park, Phys. Rev. Lett. PRLTAO 0031-9007 102, 086403 (2009). 10.1103/PhysRevLett.102.086403
15. V. Stancu, F. Sava, M. Lisca, L. Pintilie, and M. Popescu, J. Phys.: Conf. Ser. JPCSDZ 1742-6588 94, 012012 (2008). 10.1088/1742-6596/94/1/012012
16. N. R. S. Farley, C. R. Staddon, L. Zhao, K. W. Edmonds, B. L. Gallagher, and D. H. Gregory, J. Mater. Chem. JMACEP 0959-9428 14, 1087 (2004). 10.1039/b313271d
17. R. Kurchania and S. J. Milne, J. Mater. Res. JMREEE 0884-2914 14, 1852 (1999). 10.1557/JMR.1999.0249
18. L. Pintilie, I. Vrejoiu, D. Hesse, G. LeRhun, and M. Alexe, Phys. Rev. B PRBMDO 0163-1829 75, 224113 (2007). 10.1103/PhysRevB.75.224113
19. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor Physics and Technology) (Wiley, New York, 1982).
20. M. Forsberg, D. Pasquariello, M. Camacho, and D. Bergman, J. Electron. Mater. JECMA5 0361-5235 32, 111 (2003). 10.1007/s11664-003-0180-5
21. L. Pintilie, M. Lisca, and M. Alexe, Appl. Phys. Lett. APPLAB 0003-6951 86, 192902 (2005). 10.1063/1.1926403 (Pubitemid 40861129)