Dielectric and piezoelectric properties of highly (1 0 0)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Journal of Crystal Growth

Volumn 284, Issue 1-2, 2005, Pages 190-196

  Guo, Yiping ^a   Suzuki, Kazuyuki ^a   Nishizawa, Kaori ^a   Miki, Takeshi ^a   Kato, Kazumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A3. Chemical solution deposition; B1. BaTiO3; B2. Piezoelectric materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES; PERMITTIVITY; PIEZOELECTRIC MATERIALS; SOLUTIONS; THIN FILM CIRCUITS; TITANIUM OXIDES; X RAY DIFFRACTION;

BATIO3; CHEMICAL SOLUTION DEPOSITION; PIEZOELECTRIC PROPERTIES;

BARIUM COMPOUNDS;

EID: 25144446407     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.017     Document Type: Article

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