Resistive hysteresis and interface charge coupling in BaTiO3 -ZnO heterostructures

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Voora, V M ^a   Hofmann, T ^a   Schubert, M ^a,a   Brandt, M ^b   Lorenz, M ^b   Grundmann, M ^b   Ashkenov, N ^b  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION LAYERS; FORWARD BIAS; HETEROSTRUCTURES; HYSTERESIS MEASUREMENTS; INTERFACE CHARGES; MEMORY EFFECTS; PARAELECTRIC PHASE TRANSITIONS; PULSED LASERS; RESISTANCE MEASUREMENTS; SI SUBSTRATES; SPONTANEOUS POLARIZATIONS; TIME DEPENDENTS; ZNO;

CRYSTALS; FERROELECTRICITY; PHASE INTERFACES; PHASE TRANSITIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

HYSTERESIS;

EID: 64349121090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116122     Document Type: Article

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