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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

Reduced low frequency noise in electron beam evaporated MgO magnetic tunnel junctions

(5) Diao, Z a Feng, J F a Kurt, H a Feng, G a Coey, J M D a

a TRINITY COLLEGE DUBLIN (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS DEPENDENCE; CHARGE TRAP STATE; ELECTRON BEAM EVAPORATION; LOW-FREQUENCY NOISE; LOWER DENSITY; LOWER NOISE; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; NORMALIZED NOISE; ORDER OF MAGNITUDE; RADIO FREQUENCY SPUTTERING; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; ELECTRON BEAMS; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; OXYGEN; OXYGEN VACANCIES; THERMAL NOISE;

TUNNEL JUNCTIONS;

EID: 77953009407 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3431620 Document Type: Article

Times cited : (35)

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