Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature

Applied Physics Letters

Volumn 90, Issue 25, 2007, Pages

  Scola, J ^a   Polovy, H ^a   Fermon, C ^a   Pannetier Lecoeur M ^a   Feng, G ^b   Fahy, K ^b   Coey, J M D ^b  

^a SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTROCHEMICAL ELECTRODES; MAGNESIA; MAGNETORESISTANCE; SPURIOUS SIGNAL NOISE;

ANNEALING TEMPERATURE; LOW FREQUENCY NOISE; MAGNETIC TUNNEL JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 34547269879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749433     Document Type: Article

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