Highly sensitive pH sensing using an indium nitride ion-sensitive field-effect transistor

IEEE Sensors Journal

Volumn 11, Issue 5, 2011, Pages 1157-1161

  Chang, Yuh Hwa ^a   Lu, Yen Sheng ^a   Hong, Yu Liang ^a   Gwo, Shangjr ^a   Yeh, J Andrew ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Indium nitride (InN); ion sensitive field effect transistor (ISFET); pH sensor; site binding model

Indexed keywords

CHEMICAL BINDING; CONDUCTION CHANNEL; HIGH PH; HIGHLY SENSITIVE; INDIUM NITRIDE; INDIUM OXIDE; ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET); PH RANGE; PH SENSING; RESPONSE TIME; SITE BINDING; SURFACE ELECTRON ACCUMULATION; SURFACE FUNCTIONS; ULTRA-THIN;

FIELD EFFECT TRANSISTORS; INDIUM; IONS; NITRIDES; PH SENSORS; SENSITIVITY ANALYSIS; SENSORS;

PH EFFECTS;

EID: 79952833050     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2080317     Document Type: Article

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