Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias

Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

  Lu, Yen Sheng ^a   Chang, Yuh Hwa ^a   Hong, Yu Liang ^a   Lee, Hong Mao ^a   Gwo, Shangjr ^a   Yeh, J Andrew ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; ELECTRICAL PROPERTY; ELECTROLYTE GATE; GATE BIAS; NON-POLAR; RESPONSE TIME;

DIELECTRIC RELAXATION; ELECTRIC PROPERTIES; ELECTROLYTES; FIELD EFFECT TRANSISTORS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 70249094271     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3216064     Document Type: Article

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