Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory

Thin Solid Films

Volumn 519, Issue 11, 2011, Pages 3897-3901

  Chen, Shih Cheng ^a   Chang, Ting Chang ^b   Chen, Wei Ren ^c   Lo, Yuan Chun ^a   Wu, Kai Ting ^a   Sze, S M ^c   Chen, Jason ^d   Liao, I H ^d   Yeh, Fon Shan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d ProMOS Technologies Inc   (Taiwan)

Author keywords

Hydrogen plasma; Nonvolatile memory; Tungsten nanocrystals; X ray photoelectron spectroscopy

Indexed keywords

CHARGE STORAGE CHARACTERISTIC; DATA RETENTION; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; HIGH DENSITY; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; MEMORY DEVICE; NON-VOLATILE MEMORIES; RETENTION PROPERTIES; SI DANGLING BONDS; SI-H BONDS; TUNGSTEN NANOCRYSTALS; X RAY PHOTONS;

BINDING ENERGY; DANGLING BONDS; EMISSION SPECTROSCOPY; HYDROGEN; NANOCRYSTALS; NONVOLATILE STORAGE; PHOTOELECTRICITY; PHOTONS; PLASMA APPLICATIONS; PLASMAS; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; VOLTAGE DIVIDERS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

HYDROGEN STORAGE;

EID: 79952739592     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.259     Document Type: Article

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