Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications

Materials Science and Engineering: B

Volumn 156, Issue 1-3, 2009, Pages 1-5

  Gupta, R K ^a   Ghosh, K ^a   Patel, R ^a   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

Author keywords

Electrical properties; Magnesium oxide; Optical properties; Thin films; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS FILMS; CARRIER CONCENTRATION; ENERGY GAP; EXCIMER LASERS; FLUORINE COMPOUNDS; II-VI SEMICONDUCTORS; MAGNESIA; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE FILMS; TEMPERATURE; ZINC OXIDE;

HIGHEST TEMPERATURE; KRF EXCIMER LASER; LOWS-TEMPERATURES; MG-DOPING; OPTICAL AND ELECTRICAL PROPERTIES; OPTOELECTRONIC APPLICATIONS; QUARTZ SUBSTRATE; THIN-FILMS; VISIBLE SPECTRUMS; WIDE-BAND-GAP;

THIN FILMS;

EID: 58149328395     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.051     Document Type: Article

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