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Volumn 318, Issue 1, 2011, Pages 496-499

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

(9) Leszczynski, M a,b Czernecki, R a,b Krukowski, S a Krysko, M a Targowski, G b Prystawko, P a,b Plesiewicz, J b Perlin, P a,b Suski, T a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b TOPGAN LTD (Poland)

Author keywords

A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconductor ternary compounds

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTOR TERNARY COMPOUNDS; EXPERIMENTAL DATA; GAN SUBSTRATE; GROWTH MODELS; HIGH TEMPERATURE; INDIUM ATOMS; METAL-ORGANIC CHEMICAL VAPOR EPITAXIES; METAL-ORGANIC VAPOR PHASE EPITAXY; STEP-FLOW GROWTH;

EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; TERNARY ALLOYS; TERNARY SYSTEMS; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 79952736817 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.050 Document Type: Conference Paper

Times cited : (41)

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