Tilt of InGaN layers on miscut GaN substrates

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 7, 2010, Pages 142-144

  Krysko M ^a   Domagala, J Z ^c   Czernecki, R ^a,b   Leszczynski, M ^a,b   Perlin, P ^a,b   Suski, T ^a   Grzanka, Sz ^b   Targowski, G ^b   Grzegory, I ^a,b   Bockowski M ^a,b   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Heteroepitaxy; III V semiconductors; Lattice mismatch

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; EXPERIMENTAL DATA; GAN SUBSTRATE; HETEROEPITAXY; HIGH-RESOLUTION X-RAY DIFFRACTION; II-IV SEMICONDUCTORS; LATTICE PLANE;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE MISMATCH; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 77954766697     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004053     Document Type: Article

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