Nitride-based quantum structures and devices on modified GaN substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1130-1134

  Perlin, Piotr ^a,b   Franssen, Gijs ^a   Szeszko, Justyna ^c   Czernecki, R ^b   Targowski, Grzegorz ^a   Kryśko, Marcin ^a   Grzanka, Szymon ^b   Nowak, Grzegorz ^a   Litwin Staszewska, Elzbieta ^a   Piotrzkowski, Ryszard ^a   Leszczyński, Mike ^a,b   Łucznik, Bolek ^a   Grzegory, Izabella ^a,b   JakieŁa, RafaŁ ^d   Albrecht, Martin ^e   Suski, Tadek ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d INSTITUTE OF PHYSICS   (Poland)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR DENSITY; ELECTRICAL PROPERTY; EMISSION LINES; FREE HOLE DENSITY; GALLIUM NITRIDE SUBSTRATE; GAN SUBSTRATE; INDIUM CONTENT; INDIUM SEGREGATION; LIGHT EMITTERS; METAL-ORGANIC VAPOR PHASE EPITAXY; MG CONCENTRATIONS; MIS-ORIENTATION; MISORIENTATION ANGLE; P-TYPE DOPING; P-TYPE GAN; QUANTUM STRUCTURE; QUANTUM WELL; SURFACE MISORIENTATION;

CATHODOLUMINESCENCE; CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 67649935002     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880911     Document Type: Article

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