Surface and interface characterization of sequentially plasma activated silicon, silicon dioxide and germanium wafers for low temperature bonding applications

ECS Transactions

Volumn 33, Issue 4, 2010, Pages 329-338

  Zhang, F ^a   Kibria, M G ^a   Cormier, K ^a   Howlader, M M R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROPHILICITY; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON OXIDES; SURFACE ROUGHNESS; TEMPERATURE; WAFER BONDING;

BONDED INTERFACE; LOW DOPING CONCENTRATIONS; LOW TEMPERATURE BONDING; LOW TEMPERATURES; OXIDIZED SURFACES; PLASMA-ACTIVATED BONDINGS; SURFACE ACTIVATION; SURFACE AND INTERFACES;

SILICON WAFERS;

EID: 79952665133     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3483522     Document Type: Conference Paper

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