Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2114-2118

  Howlader, M M R ^a   Watanabe, T ^a   Suga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BOND STRENGTH (MATERIALS); BONDING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRONIC DENSITY OF STATES; PHASE TRANSITIONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; SURFACE PHENOMENA; TENSILE TESTING;

BAND GAP STATES; DOPING CONTROLS; INTERFACE CURRENT; SURFACE ACTIVATED BONDING; SURFACE CHARACTERISATION;

INTERFACES (MATERIALS);

EID: 0035519663     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1414115     Document Type: Article

References (11)

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