Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1 - xGex/Si(100) heterostructure

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 110-112

  Seo, Takahiro ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Heterostructure; Negative differential conductance (NDC); Quantum well; Resonant tunneling diode (RTD); Si; SiGe; Strain

Indexed keywords

DIODES; ELECTRON TUBE DIODES; GERMANIUM; HETEROJUNCTIONS; MODULATION; RESONANT TUNNELING; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODES; TUNNELING (EXCAVATION);

HETEROSTRUCTURE; NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); QUANTUM WELL; RESONANT TUNNELING DIODE (RTD); SI; SIGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849409166     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.037     Document Type: Article

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