Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(1 0 0) grown by low-temperature low-pressure CVD

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 315-320

  Han, Ping ^a   Sakuraba, Masao ^a   Jeong, Young Cheon ^a   Bock, Kahlheinz ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

RESONANT TUNNELING DIODES; SILICON GERMANIDE;

TUNNEL DIODES;

EID: 0034140993     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00562-X     Document Type: Article

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