Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(1 0 0) by low-temperature ultraclean LPCVD

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Ito, Ryota ^a,b   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b AKITA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; LEAKAGE CURRENTS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

CURRENT-VOLTAGE CHARACTERISTICS; HOLE RESONANT TUNNELLING DIODES; NEGATIVE DIFFERENTIAL CONDUCTANCE; SHARP CURRENT PEAKS;

ELECTRON TUNNELING;

EID: 34247211058     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S09     Document Type: Article

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