SCOPUS 정보 검색 플랫폼

Volumn 89, Issue 1-3, 2002, Pages 26-29

n-type Si/SiGe resonant tunnelling diodes

(10) Paul, D J a See, P a Zozoulenko, I V b Berggren, K F b Hollander B c Mantl, S c Griffin, N d Coonan, B P d Redmond, G d Crean, G M d

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b LINKÖPING UNIVERSITY (Sweden)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

Electronic device; Germanium; Quantum effects; Silicon; Tunnelling

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; OSCILLATIONS; QUANTUM THEORY; RESONANT TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

PEAK-TO-VALLEY CURRENT RATIOS (PVCR);

SEMICONDUCTOR DIODES;

EID: 0037074866 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00785-1 Document Type: Conference Paper

Times cited : (10)

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