Fabrication of hole resonant tunneling diodes with nanometer order heterostructures of Si/strained Si1-xGex epitaxially grown on Si(100)

ECS Transactions

Volumn 11, Issue 6, 2007, Pages 131-139

  Sakuraba, Masao ^a   Ito, Ryota ^a,b   Seo, Takahiro ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b AKITA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; LANDFORMS; POWER SEMICONDUCTOR DIODES; RESONANT TUNNELING; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SI-GE ALLOYS; SILICON; TEMPERATURE DISTRIBUTION;

BARRIER THICKNESS; EPITAXIALLY GROWN; GE FRACTION; HIGH-PEAK CURRENTS; NEGATIVE DIFFERENTIAL CONDUCTANCE; PEAK-TO-VALLEY RATIOS; TEMPERATURE DEPENDENCE; VALLEY CURRENT;

RESONANT TUNNELING DIODES;

EID: 45749104044     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2778371     Document Type: Conference Paper

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