High PVCR Si/Si1-xGex DW RTD formed with new triple-layer buffer

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 417-421

  Maekawa, Hirotaka ^a   Shoji, Masatsugu ^a   Suda, Yoshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Peak to valley current ratio; Resonant tunneling diode; SiGe; Strain relief buffer; Threading dislocation

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ELECTRON SCATTERING; INTERFACES (MATERIALS); LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

PEAK-TO-VALLEY CURRENT RATIO (PVCR); RESONANT TUNNELING DIODES (RTD); SIGE; STRAIN-RELIEF BUFFER; THREADING DISLOCATION;

SILICON ALLOYS;

EID: 13244292557     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.053     Document Type: Conference Paper

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