Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(1 0 0) heterostructure

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 912-915

  Seo, Takahiro ^a   Takahashi, Kuniaki ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Heterostructure; Negative differential conductance (NDC); Quantum well; Resonant tunneling diode (RTD); Si; SiGe; Strain

Indexed keywords

HETEROSTRUCTURE; NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); QUANTUM WELL; RESONANT TUNNELING DIODE (RTD); SI; SIGE;

ELECTRON TUBE DIODES; EPITAXIAL GROWTH; FREQUENCY DIVIDING CIRCUITS; GERMANIUM; HETEROJUNCTIONS; RESONANT TUNNELING; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON ALLOYS; SURFACE ROUGHNESS; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649207644     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.016     Document Type: Article

References (13)

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