Synchrotron radiation photoelectron spectroscopy of metal gate / HfSiO(N) /SiO(N) / Si stack structures

ECS Transactions

Volumn 33, Issue 3, 2010, Pages 231-240

  Oshima, M ^a,b   Toyoda, S ^a,b   Kamada, H ^c   Tanimura, T ^c   Nakamura, Y ^c   Horiba, K ^a,b   Kumigashira, H ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HIGH-K DIELECTRIC; MAXIMUM ENTROPY METHODS; MOLECULAR ORBITALS; NANOTECHNOLOGY; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; REFRACTORY METAL COMPOUNDS; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION; SYNCHROTRONS;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; HIGH RESOLUTION PHOTOELECTRON SPECTROSCOPY; IN-DEPTH ANALYSIS; IN-DEPTH PROFILE; IRRADIATION TIME; PRECISE ANALYSIS; SCANNING PHOTOELECTRON MICROSCOPY; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

METAL ANALYSIS;

EID: 79952166694     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3481610     Document Type: Conference Paper

References (17)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. K. Tatsumura, T. Ishihara, S. Inumiya, K. Nakajima, A. Kaneko, M. Goto, S. Kawanaka, and A. Kinoshita, Tech. Dig. - Int. Electron Devices Meet. 2008, 25.
3. B. J. O'Sullivan, R. Mitsuhashi, G. Pourtois, M. Aoulaiche, M. Houssa, N. Van der Heyden, T. Schram, Y. Harada, G. Groeseneken, P. Absil, S. Biesemans, T. Nakabayashi, A. Ikeda, and M. Niwa, J. Appl. Phys. 104, 044512 (2008).
4. R.L. Opila and J. Eng Jr., Prog. Surf. Sci. 69, 125 (2002).
5. A.K. Livesey and G. C. Smith, J. Electron Spec. Rel. Phenom. 67, 439 (1994).
6. S. Toyoda, J. Okabayashi, M. Oshima, K. Ikeda, G.L. Liu, Z. Liu and K. Usuda, Surface and Interface Analysis 40, 1619 (2008).
7. S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda, J. Surf. Anal. 15, 299 (2009).
8. S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata and M. Niwa, Appl. Phys. Lett. 96, 042905 (2010).
9. M. D. Ulrich, J. G. Hong, J. E. Rowe, G. Lucovsky, A. S.-Y. Chan, and T. E. Mandy, J. Vac. Sci. Technol. B 21, 1777 (2003).
10. A. Pasquarello, M. S. Hybertsen, and R. Car, Phys. Rev. B 53, 10942 (1996).
11. K. Kita and A. Toriumi, Appl. Phys. Lett, 94, 132902 (2009).
12. P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo- Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. Böcke, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 92, 092901 (2008).
13. S. Guenther, Prog. Surf. Sci. 70, 187 (2002).
14. T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, GL. Liu and Z. Liu, Appl. Phys. Lett. 92, 082903 (2008).
15. T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda, Appl. Phys. Lett. 94, 082903 (2009).
16. T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda, Appl. Phys. Lett. 95, 183113 (2009).
17. T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, T. Sukegawa, G. L. Liu, and Z. Liu, Appl. Phys. Lett. 96, 162902 (2010).