SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 16, 2010, Pages

Photoinduced charge-trapping phenomena in metal/high- k gate stack structures studied by synchrotron radiation photoemission spectroscopy

(8) Tanimura, T a Toyoda, S a,b Kamada, H a Kumigashira, H a,b Oshima, M a,b Sukegawa, T c Liu, G L c Liu, Z c

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ENERGY LEVEL; HFSION FILM; METAL GATE ELECTRODES; METAL/HIGH-K GATE; NEGATIVE CHARGE; PHOTO-INDUCED CHARGE; PHOTOEMISSION SPECTROSCOPY; POSITIVE CHARGES; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; TIME-DEPENDENT; TIN METAL GATE; TRAPPED CHARGE;

EMISSION SPECTROSCOPY; LOGIC GATES; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; PLATINUM; SYNCHROTRON RADIATION; SYNCHROTRONS; TITANIUM NITRIDE; WORK FUNCTION;

HAFNIUM COMPOUNDS;

EID: 77951862638 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3409162 Document Type: Article

Times cited : (13)

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