Simulation of short-channel effects in N- and Ga-polar AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 704-708

  Park, Pil Sung ^a   Rajan, Siddharth ^a  

^a The Ohio State University   (United States)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); drain induced barrier lowering (DIBL); Ga polar; N polar; short channel effects; simulation; technology computer aided design (TCAD)

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DRAIN-INDUCED BARRIER LOWERING; GA-POLAR; N-POLAR; SHORT-CHANNEL EFFECTS; SIMULATION; TECHNOLOGY COMPUTER-AIDED DESIGN (TCAD);

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON MOBILITY; GALLIUM; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79952042447     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2099121     Document Type: Article

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