Recessed 70-nm gate-length AlGaN/GaN HEMTs fabricated using an Al2O3/SiNχ dielectric layer

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 913-915

  Kim, Donghyun ^a   Kumar, Vipan ^a   Lee, Jaesun ^a   Yan, Minjun ^a   Dabiran, A M ^b   Wowchak, A M ^b   Chow, Peter P ^b   Adesida, Illesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

Al2O3 SiNx; AlGaN GaN; GaN; High electron mobility transistors (HEMTs); Recessed gate

Indexed keywords

AL2O3/SINX; ALGAN/GAN; GAN; HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS); RECESSED GATE;

ALUMINUM; CRYSTAL GROWTH; CUTOFF FREQUENCY; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69949178769     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2027037     Document Type: Article

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