SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

Formation of submicrometer pore arrays by electrochemical etching of silicon and nanoimprint lithography

(6) Laffite, Guillaume a Roumanie, Marilyne a Gourgon, Cecile b Perret, Corinne b Boussey, Jumana b Kleimann, Pascal a

a UNIVERSITÉ LYON 1 (France)

b Laboratoire Interdisciplinaire de Physique (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTES; HYDROFLUORIC ACID; NANOIMPRINT LITHOGRAPHY;

ELECTRICAL BREAKDOWN; N TYPE SILICON; PHOTO-ELECTROCHEMICAL ETCHING; PHOTOGENERATED CARRIERS; PORE GEOMETRY; SILICON RESISTIVITY; SUBMICROMETERS; WELL-ORDERED PORES;

SILICON WAFERS;

EID: 79951966877 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3514584 Document Type: Article

Times cited : (10)

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