Macro pore and pillar array formation in silicon by electrochemical etching

Physica Scripta T

Volumn T126, Issue , 2006, Pages 72-76

  Linnros, Jan ^a   Badel, Xavier ^a   Kleimann, Pascal ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ETCHING; OXIDATION; PORE SIZE;

DEPLETION WIDTH; MACRO PORES; PILLAR ARRAY FORMATION;

SEMICONDUCTING SILICON;

EID: 42349094102     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/017     Document Type: Conference Paper

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