Electrochemical etching process to tune the diameter of arrayed deep pores by controlling carrier collection at a semiconductor-electrolyte interface

Electrochemistry Communications

Volumn 12, Issue 6, 2010, Pages 765-768

  Sato, Hirotaka ^a   Yamaguchi, Takuya ^a   Isobe, Tetsuhiko ^a   Shoji, Shuichi ^a   Homma, Takayuki ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Electrochemical etching; High aspect ratio structure; Maskless fabrication; Porous silicon; Semiconductor electrolyte interface; Space charge region (SCR)

Indexed keywords

CARRIER COLLECTION; ELECTROLYTE INTERFACES; ETCHING REACTION; HIGH ASPECT RATIO; HIGH ASPECT RATIO STRUCTURES; KEY FACTORS; MASKLESS FABRICATION; OVERPOTENTIAL; SCHOTTKY BARRIERS; SEMICONDUCTOR ELECTROLYTE INTERFACES; SILICON SURFACES; SPACE CHARGE REGIONS; SPECIFIC RESISTANCES; TUNING MECHANISM;

ASPECT RATIO; ELECTRIC SPACE CHARGE; ELECTROLYTES; FABRICATION; MICROCAVITIES; POROUS SILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

ELECTROCHEMICAL ETCHING;

EID: 77955716132     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2010.03.028     Document Type: Article

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