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Volumn 36, Issue 1-3, 2004, Pages 245-253
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Formation of ordered pore arrays at the nanoscale by electrochemical etching of n-type silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTROLYTIC POLISHING;
ETCHING;
HYDROFLUORIC ACID;
LITHOGRAPHY;
PORE SIZE;
SILICON WAFERS;
DRY OXIDE ETCHING;
ELECTROCHEMICAL ETCHING (ECE);
PORE ARRAYS;
SPACE CHARGE REGION (SCR);
SILICON;
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EID: 9644259379
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1016/j.spmi.2004.08.037 Document Type: Article |
Times cited : (13)
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References (18)
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