SCOPUS 정보 검색 플랫폼

Volumn 158, Issue 1, 2011, Pages

Atomic-layer-deposited dielectric thin films on a Cu clad laminate substrate for embedded metal-insulator-metal capacitor applications in printed circuit boards

(7) Park, Tae Joo a Kim, Jeong Hwan a Jang, Jae Hyuck a Hwang, Cheol Seong a Kang, Hyung Dong b Chung, Yeoul Kyo b Oh, Yong Soo b

a Seoul National University (South Korea)

b Samsung Electro Mechanics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DIELECTRIC THIN FILMS; ELECTRICAL PROPERTY; EMBEDDED METALS; INTERFACIAL LAYER; INTERFACIAL REACTION BARRIERS; INTERFACIAL REACTIONS; LAMINATE SUBSTRATES; MIXED OXIDE; RESIDUAL IMPURITIES; SHARP INTERFACE; STACKED FILM;

ALUMINUM; COPPER; ELECTRIC PROPERTIES; HAFNIUM; METAL INSULATOR BOUNDARIES; PLATINUM; PRINTED CIRCUIT BOARDS; PRINTED CIRCUIT MANUFACTURE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 79951962803 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3514601 Document Type: Article

Times cited : (6)

References (23)

1
- 0035519376
- Electrical behavior of decoupling capacitors embedded in multilayered PCBs
- DOI 10.1109/15.974634, PII S0018937501102188
- A. Madou and L. Martens, IEEE Trans. Electromagn. Compa., 43, 549 (2001). 10.1109/15.974634 (Pubitemid 34091975)
- (2001) IEEE Transactions on Electromagnetic Compatibility , vol.43 , Issue.4 , pp. 549-556
- Madou, A.¹ Martens, L.²

2
- 0032180390
- JJAPA5 0021-4922,. 10.1143/JJAP.37.L1241
- L.-S. Chen, S.-L. Fu, and K.-D. Huang, Jpn. J. Appl. Phys. JJAPA5 0021-4922, 37, L1241 (1998). 10.1143/JJAP.37.L1241
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1241
- Chen, L.-S.¹ Fu, S.-L.² Huang, K.-D.³

3
- 33646690832
- ZZZZZZ 1059-843X
- W. J. Borland and S. Ferguson, Circuit Tree ZZZZZZ 1059-843X, March, 94 (2001).
- (2001) Circuit Tree , pp. 94
- Borland, W.J.¹ Ferguson, S.²

4
- 0035871550
- Overview of low temperature co-fired ceramics tape technology for meso-system technology (MsST)
- DOI 10.1016/S0924-4247(00)00554-9, PII S0924424700005549
- M. R. Gongora-Rubio, P. Espinoza-Vallejos, L. Sola-Laguna, and J. J. Santiago-Aviles, Sens. Actuators, A SAAPEB 0924-4247, 89, 222 (2001). 10.1016/S0924-4247(00)00554-9 (Pubitemid 32296915)
- (2001) Sensors and Actuators, A: Physical , vol.89 , Issue.3 , pp. 222-241
- Gongora-Rubio, M.R.¹ Espinoza-Vallejos, P.² Sola-Laguna, L.³ Santiago-Aviles, J.J.⁴

5
- 33646699079
- Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications
- DOI 10.1063/1.2202129
- J. H. Park, W. S. Lee, N. J. Seong, S. G. Yoon, S. H. Son, H. M. Chung, J. S. Moon, H. J. Jin, S. E. Lee, J. W. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 88, 192902 (2006). 10.1063/1.2202129 (Pubitemid 43736731)
- (2006) Applied Physics Letters , vol.88 , Issue.19 , pp. 192902
- Park, J.-H.¹ Lee, W.-S.² Seong, N.-J.³ Yoon, S.-G.⁴ Son, S.-H.⁵ Chung, H.-M.⁶ Moon, J.-S.⁷ Jin, H.-J.⁸ Lee, S.-E.⁹ Lee, J.-W.¹⁰ Kang, H.-D.¹¹ Chung, Y.-K.¹² Oh, Y.-S.¹³

6
- 33845407714
- 7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications
- DOI 10.1063/1.2402896
- J. H. Park, C. J. Xian, N. J. Seong, S. G. Yoon, S. H. Son, H. M. Chung, J. S. Moon, H. J. Jin, S. E. Lee, J. W. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 89, 232910 (2006). 10.1063/1.2402896 (Pubitemid 44907277)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232910
- Park, J.-H.¹ Xian, C.-J.² Seong, N.-J.³ Yoon, S.-G.⁴ Son, S.-H.⁵ Chung, H.-M.⁶ Moon, J.-S.⁷ Jin, H.-J.⁸ Lee, S.-E.⁹ Lee, J.-W.¹⁰ Kang, H.-D.¹¹ Chung, Y.-K.¹² Oh, Y.-S.¹³

7
- 33846988580
- APPLAB 0003-6951,. 10.1063/1.2435336
- C.-J. Xian, J.-H. Park, K.-C. Ahn, S.-G. Yoon, J.-W. Lee, W.-C. Kim, S.-T. Lim, S.-H. Son, J.-S. Moon, H.-M. Chung, Appl. Phys. Lett. APPLAB 0003-6951, 90, 052903 (2007). 10.1063/1.2435336
- (2007) Appl. Phys. Lett. , vol.90 , pp. 052903
- Xian, C.-J.¹ Park, J.-H.² Ahn, K.-C.³ Yoon, S.-G.⁴ Lee, J.-W.⁵ Kim, W.-C.⁶ Lim, S.-T.⁷ Son, S.-H.⁸ Moon, J.-S.⁹ Chung, H.-M.¹⁰

8
- 29144455358
- Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates
- DOI 10.1557/JMR.2005.0342
- J. F. Ihlefeld, J.-P. Maria, and W. Borland, J. Mater. Res. JMREEE 0884-2914, 20, 10 (2005). 10.1557/JMR.2005.0342 (Pubitemid 41800267)
- (2005) Journal of Materials Research , vol.20 , Issue.10 , pp. 2838-2844
- Ihlefeld, J.F.¹ Maria, J.-P.² Borland, W.³

9
- 17444387443
- Copper compatible barium titanate thin films for embedded passives
- DOI 10.1007/s10832-005-0866-6
- J. F. Ihlefeld, B. Laughlin, A. Hunt-Lowery, W. Borland, A. I. Kingon, and J.-P. Maria, J. Electroceram. JOELFJ 1385-3449, 14, 95 (2005). 10.1007/s10832-005-0866-6 (Pubitemid 40537778)
- (2005) Journal of Electroceramics , vol.14 , Issue.2 , pp. 95-102
- Ihlefeld, J.¹ Laughlin, B.² Hunt-Lowery, A.³ Borland, W.⁴ Kingon, A.⁵ Maria, J.-P.⁶

10
- 6344252882
- JMREEE 0884-2914,. 10.1557/JMR.2004.0387
- T. Kim, A. I. Kingon, J.-P. Maria, and R. T. Croswell, J. Mater. Res. JMREEE 0884-2914, 19, 2841 (2004). 10.1557/JMR.2004.0387
- (2004) J. Mater. Res. , vol.19 , pp. 2841
- Kim, T.¹ Kingon, A.I.² Maria, J.-P.³ Croswell, R.T.⁴

11
- 0035497590
- JACTAW 0002-7820,. 10.1111/j.1151-2916.2001.tb01029.x
- J.-P. Maria, K. Cheek, S. Streiffer, S.-H. Kim, G. Dunn, and A. Kingon, J. Am. Ceram. Soc. JACTAW 0002-7820, 84, 2436 (2001). 10.1111/j.1151-2916.2001. tb01029.x
- (2001) J. Am. Ceram. Soc. , vol.84 , pp. 2436
- Maria, J.-P.¹ Cheek, K.² Streiffer, S.³ Kim, S.-H.⁴ Dunn, G.⁵ Kingon, A.⁶

12
- 75649140552
- CHREAY 0009-2665
- S. M. George, Chem. Rev. (Washington, D.C.) CHREAY 0009-2665, 110, 111 (2010).
- (2010) Chem. Rev. (Washington, D.C.) , vol.110 , pp. 111
- George, S.M.¹

13
- 79951962124
- International Technology Roadmafor Semiconductors (),; last accessed March 2009
- International Technology Roadmap for Semiconductors (2009), http://www.itrs.net/; last accessed March 2009.
- (2009)

14
- 15744384552
- ALD of hafnium oxide thin films from tetrakis(ethylmethylamino)hafnium and ozone
- DOI 10.1149/1.1859631
- X. Liu, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon, J. Electrochem. Soc. JESOAN 0013-4651, 152, G213 (2005). 10.1149/1.1859631 (Pubitemid 40407354)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.3
- Liu, X.¹ Ramanathan, S.² Longdergan, A.³ Srivastava, A.⁴ Lee, E.⁵ Seidel, T.E.⁶ Barton, J.T.⁷ Pang, D.⁸ Gordon, R.G.⁹

15
- 77954848763
- CMATEX 0897-4756,. 10.1021/cm100620x
- T. J. Park, J. H. Kim, J. H. Jang, C.-K. Lee, K. D. Na, S. Y. Lee, H.-S. Jung, M. Kim, S. Han, and C. S. Hwang, Chem. Mater. CMATEX 0897-4756, 22, 4175 (2010). 10.1021/cm100620x
- (2010) Chem. Mater. , vol.22 , pp. 4175
- Park, T.J.¹ Kim, J.H.² Jang, J.H.³ Lee, C.-K.⁴ Na, K.D.⁵ Lee, S.Y.⁶ Jung, H.-S.⁷ Kim, M.⁸ Han, S.⁹ Hwang, C.S.¹⁰

16
- 0142057279
- APPLAB 0003-6951,. 10.1063/1.1613031
- H. Kim, C. O. Chui, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. APPLAB 0003-6951, 83, 2647 (2003). 10.1063/1.1613031
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2647
- Kim, H.¹ Chui, C.O.² Saraswat, K.C.³ McIntyre, P.C.⁴

17
- 0019024234
- IETDAI 0018-9383,. 10.1109/T-ED.1980.19986
- H. Hasegawa and T. Sawada, IEEE Trans. Electron Devices IETDAI 0018-9383, 27, 1055 (1980). 10.1109/T-ED.1980.19986
- (1980) IEEE Trans. Electron Devices , vol.27 , pp. 1055
- Hasegawa, H.¹ Sawada, T.²

18
- 0018295267
- INTERFACE STATE BAND BETWEEN GaAs AND ITS ANODIC NATIVE OXIDE
- DOI 10.1016/0040-6090(79)90063-4
- T. Sawada and H. Hasegawa, Thin Solid Films THSFAP 0040-6090, 56, 183 (1979). 10.1016/0040-6090(79)90063-4 (Pubitemid 9459786)
- (1979) Thin Solid Films , vol.56 , Issue.1-2 , pp. 183-200
- Sawada, T.¹ Hasegawa, H.²

19
- 33645719096
- JESOAN 0013-4651,. 10.1149/1.2177047
- S. K. Kim, S. W. Lee, C. S. Hwang, Y.-S. Min, J. Y. Won, and J. Jeong, J. Electrochem. Soc. JESOAN 0013-4651, 153, F69 (2006). 10.1149/1.2177047
- (2006) J. Electrochem. Soc. , vol.153 , pp. 69
- Kim, S.K.¹ Lee, S.W.² Hwang, C.S.³ Min, Y.-S.⁴ Won, J.Y.⁵ Jeong, J.⁶

20
- 10044271096
- APPLAB 0003-6951,. 10.1063/1.1812832
- S. K. Kim, K. M. Kim, W. D. Kim, and C. S. Hwang, Appl. Phys. Lett. APPLAB 0003-6951, 85, 4112 (2004). 10.1063/1.1812832
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4112
- Kim, S.K.¹ Kim, K.M.² Kim, W.D.³ Hwang, C.S.⁴

21
- 74249120812
- 10.1149/1.3269901
- S.-J. Won, S. Suh, S. W. Lee, G.-J. Choi, C. S. Hwang, and H. J. Kim, Electochem. Solid State Lett., 13, G13 (2010). 10.1149/1.3269901
- (2010) Electochem. Solid State Lett. , vol.13 , pp. 13
- Won, S.-J.¹ Suh, S.² Lee, S.W.³ Choi, G.-J.⁴ Hwang, C.S.⁵ Kim, H.J.⁶

22
- 77956381226
- APPLAB 0003-6951,. 10.1063/1.3481377
- T. J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, M. Rousseau, X. Liu, H. Li, Appl. Phys. Lett. APPLAB 0003-6951, 97, 092904 (2010). 10.1063/1.3481377
- (2010) Appl. Phys. Lett. , vol.97 , pp. 092904
- Park, T.J.¹ Sivasubramani, P.² Coss, B.E.³ Kim, H.-C.⁴ Lee, B.⁵ Wallace, R.M.⁶ Kim, J.⁷ Rousseau, M.⁸ Liu, X.⁹ Li, H.¹⁰

23
- 0035872897
- JAPIAU 0021-8979,. 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979, 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.