Multibit operation of Cu/Cu-GeTe/W resistive memory device controlled by pulse voltage magnitude and width

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 375-377

  Choi, Sang Jun ^a   Kim, Ki Hong ^a   Park, Gyeong Su ^a   Bae, Hyung Jin ^a   Yang, Woo Young ^a   Cho, Soohaeng ^b  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University Wonju   (South Korea)

Author keywords

Copper; GeTe; multibit operation; nonvolatile; resistive switching memory; solid electrolyte

Indexed keywords

BIT-OPERATIONS; CU ATOMS; DEVICE CURRENTS; ENHANCED STORAGE; GETE; MEMORY CELL; MEMORY DEVICE; MULTI-BITS; NON-VOLATILE; PULSE INPUT; PULSE VOLTAGE; RADIO FREQUENCY SPUTTERING; RESISTANCE LEVEL; RESISTIVE SWITCHING MEMORIES; SAMPLE HOLDERS;

SOLID ELECTROLYTES; SWITCHING SYSTEMS;

NONVOLATILE STORAGE;

EID: 79951943841     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2097236     Document Type: Article

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