Effect of series resistance on field-effect mobility at varying channel lengths and investigation into the enhancement of source/drain metallized thin-film transistor characteristics

Japanese Journal of Applied Physics

Volumn 50, Issue 2, 2011, Pages

  Van Duy, Nguyen ^a   Baek, Kyunghyun ^a   Son, Dang Ngoc ^a   Lee, Wonbaek ^a   Kim, Kwangryul ^a   Choi, Byoungdeog ^a   Chung, Hokyun ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL RESISTANCES; CHANNEL LENGTH; CHANNEL RESISTANCE; DEVICE PERFORMANCE; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; PARASITIC RESISTANCES; SELF-ALIGNED; SERIES RESISTANCES; SHORT-CHANNEL DEVICES; SOURCE AND DRAIN ELECTRODES;

DEGRADATION; DOPING (ADDITIVES); DRAIN CURRENT; ELECTRODES; METALLIZING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79951930466     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.024101     Document Type: Article

References (15)

1. Y. Mishima, K. Yoshino, M. Takei, and N. Sasaki: IEEE Trans. Electron Devices 48 (2001) 1087.
2. S. D. Brotherton, J. R. Ayres, M. J. Edwards, C. A. Fisher, C. Glaister, J. P. Gowers, D. J. McCulloch, and M. Trainor: Thin Solid Films 337 (1999) 188.
3. C. A. Dimitriadis, M. Miyasaka, and L. Skuja: IEEE Electron Device Lett. 21 (2000) 584.
4. J. H. Park, I. H. Song, and M. K. Han: Thin Solid Films 515 (2007) 7402.
5. K. Y. Choi, J. W. Lee, and M. K. Han: IEEE Trans. Electron Devices 45 (1998) 1272.
6. J. H. Kim and J. Y. Lee: Jpn. J. Appl. Phys. 35 (1996) 2052.
7. J. C. M. Hwang, P. S. Ho, J. E. Lewis, and D. R. Campbell: J. Appl. Phys. 51 (1980) 1576.
8. S. Y. Huang, S. Xu, Q. J. Cheng, J. D. Long, and K. Ostrikov: Appl. Phys. A 97 (2009) 375.
9. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre: J. Appl. Phys. 69 (1991) 2339.
10. F. V. Farmakis, J. Brini, G. Kamarinos, C. T. Angelis, C. A. Dimitriadis, M. Miyasaka, and T. Ouisse: Solid-State Electron. 44 (2000) 913.
11. D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, Hoboken, NJ, 2000) 3rd ed., p. 500.
12. S. C. P. Lin, Y. H. Xiao, and B. Y. Tsui: IEEE Electron Device Lett. 26 (2005) 185.
13. N. Gupta and B. P. Tyagi: Phys. Scr. 71 (2005) 225.
14. H. W. Zan, T. C. Chang, P. S. Shih, D. Z. Peng, T. Y. Huang, and C. Y. Chang: Jpn. J. Appl. Phys. 42 (2003) 28.
15. B. Iniguez, Z. Xu, T. A. Fjeldly, and M. S. Shur: Solid-State Electron. 43 (1999) 1821.