An analytical model of the influence of grain size on the mobility and transfer characteristics of polysilicon Thin-Film Transistors (TFTs)

Physica Scripta

Volumn 71, Issue 2, 2005, Pages 225-228

  Gupta, Navneet ^a,c   Tyagi, B P ^b,c  

^a GRAPHIC ERA UNIVERSITY   (India)

^b DBS Post Graduate College Dehradun   (India)

^c A 23 Shivlok ^*  (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE TRANSFER; ELECTRONS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LATTICE CONSTANTS; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DOPING;

BOUNDARY BARRIERS; DOPING CONCENTRATION; EFFECTIVE CARRIER MOBILITY; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR (POLY-SI TFT);

THIN FILM TRANSISTORS;

EID: 13444293066     PISSN: 00318949     EISSN: None     Source Type: Journal    
DOI: 10.1238/Physica.Regular.071a00225     Document Type: Article

References (13)

1. Oshima, H. and Morozumi, S., IEDM Tech. Dig. 157 (1989).
2. Brotherton, S. D., Semieond, Sci. Technol. 10, 721 (1995).
3. Levinson, J., et al., J. Appl. Phys. 53, 1193 (1982).
4. Fossumj J. G. and Conde, A. O., IEEE Trans. Electron. Dev. 30, 933 (1983).
5. Kamins, T. I. and Marcoux, P. J., IEEE Trans. Electron. Dev. Lett. 1, 159 (1980).
6. Chen, H. L. and Wu, C. Y., IEEE Trans. Electron. Dev. 45, 2245 (1998).
7. Kubo, N., Kusumoto, T., Inushima, T. and Yamazaki, S., IEEE Trans. Electron. Dev. 40, 1876 (1994).
8. Ibok, E. and Garg, S., J. Electrochem. Soc. 140, 2927 (1993).
9. Tyagi, B. P. and Sen, K., Int. J. Electron. 58, 83 (1985).
10. Gupta, N. and Tyagi, B. P., Proc. Twelfth Int. Workshop Physics of Semiconductor Devices Vol I. (Narosa Publishing House, New Delhi. 2003), p. 558.
11. Serikawa, T., Shirai, S., Okamoto. A. and Suyama, S., IEEE Trans. Electron. Dev. 34, 321 (1987).
12. Kong, H. S. and Lee, C., J. Appl. Phys. 78, 6122 (1995).
13. Seto, J. Y. W., J. Appl. Phys. 46.5247 (1975).