Al-induced crystallization of an amorphous Si thin film in a polycrystalline Al/native SiO2/amorphous Si structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 A, 1996, Pages 2052-2056

  Kim, Jin Hyeok ^a   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Al; Amorphous Si; Crystallization; HRTEM; Metal induced crystallization; SiO2; Thin film

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON THIN FILM; ATOMIC LEVEL; LATTICE FRINGES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL INDUCED CRYSTALLIZATION; POLYCRYSTALLINE ALUMINUM;

AMORPHOUS FILMS;

EID: 0030125315     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2052     Document Type: Article

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