Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications

Microscopy and Microanalysis

Volumn 14, Issue SUPPL. 2, 2008, Pages 446-447

  Garcia Gutierrez, D I ^a   Kaushik, V ^a   Shahrjerdi, D ^b   Banerjee, S K ^b  

^a ATDF   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49549086888     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927608083001     Document Type: Conference Paper

References (4)

1. D. Shahrjerdi et al. App. Phys Lett. 91 (2007) 193503.
2. D. Shahrjerdi et al. App. Phys. Lett. 91 (2007) 63501.
3. M. M. Frank et al. App. Phys. Lett. 86 (2005) 152904.
4. This research was supported in part by DARPA and Micron Foundation.