A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET

Solid-State Electronics

Volumn 57, Issue 1, 2011, Pages 23-30

  Shen, Chen ^a,b   Yang, Li Tao ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b 16 01 Amara Corporate Tower ^*  (Singapore)

Author keywords

Band to band tunneling; Modeling; TCAD simulation; Tunneling FET

Indexed keywords

2D STRUCTURES; ACCURATE MODELING; BAND TO BAND TUNNELING; DEVICE PHYSICS; MESH GRIDS; MODELING; NONLOCAL; TCAD SIMULATION; TUNNELING FET;

MESFET DEVICES;

ALGORITHMS;

EID: 79951677537     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.005     Document Type: Article

References (38)

1. T. Baba Proposal for surface tunnel transistors Jpn J Appl Phys 31 1992 L455 L457
2. J.R. Tucker, C. Wang, and P.S. Carney Silicon field-effect transistor based on quantum tunneling Appl Phys Lett 65 1994 618
3. S. Sedlmaier, J. Schulze, T. Sulima, C. Fink, C. Tolksdorf, and A. Bayerstadler Phonon assisted tunne (Pubitemid 34100138)
4. P.F. Wang, K. Hilsenbeck, T. Nirschl, M. Oswald, C. Stepper, and M. Weis Complementary tunneling transistor for low power application Solid-State Electron 48 12 2004 2281 2286
5. Hu C. Green transistor as a solution to the ic power crisis. In: International conference on solid-state and integrated-circuit technology; 2008. p. 16-20.
6. Ionescu AM. New functionality and ultra low power: key opportunities for post-CMOS era. In: 2008 International symposium on VLSI technology, systems, and applications; 2008. p. 72-3.
7. Krishnamohan T, Kim D, Raghunathan S, Saraswat KC. Double-gate strained-ge heterostructure tunneling FET (TFET) with record high drive currents and 60 mv/decade subthreshold slope. In: International electron device meeting; 2008. p. 947.
8. V. Nagavarapu, R. Jhaveri, and J.C.S. Woo The tunnel source (PNPN) n-MOSFET: a novel high performance transistor IEEE Trans Electron Dev 55 2008 1013 1019 (Pubitemid 351512964)
9. Mayer F, Royer CL, Damlencourt J-F, Romanjek K, Andrieu F, Tabone C, et al. Impact of SOI, SiGeOI and GeOI substrates on CMOS compatible tunnel FET performance. In: IEEE international electron device meeting; 2008. p. 163-6.
10. 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. In: International electron device meeting; 2009. p. 949.
11. Y. Khatami, and K. Banerjee Steep subthreshold slope n- and p-type tunnel-FET devices for low-power and energy-efficient digital circuits IEEE Trans Electron Dev 56 2009 2752 2761
12. Choi WY, Song JY, Lee JD, Park YJ, Park BG. 70-nm Impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs). In: IEEE international electron device meeting; 2009. p. 975-8.
13. P.-F. Guo, L.-T. Yang, Y. Yang, L. Fan, G.-Q. Han, and G.S. Samudra Tunneling field-effect transistor: effect of strain and temperature on tunneling current IEEE Electron Dev Lett 30 2009 981 983
14. Jeon K, Loh W-Y, Patel P, Kang CY, Oh J, Bowonder A, et al. Si tunnel transistors with a novel silicided source and 46 mv/dec swing. In: Symposium on VLSI technology; 2010. p. 121-2.
15. S. Datta Electronic transport in mesoscopic systems 1998 Cambridge University Press
16. M. Shin, M. Jang, and S. Lee Quantum simulation of resonant tunneling in nanoscale tunnel transistors J Appl Phys 99 6 2006 066109
17. M. Luisier, and G. Klimeck Simulation of nanowire tunneling transistors: from the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling J Appl Phys 107 2010 084507
18. L.V. Keldysh Behavior of non-metallic crystals in strong electric fields Sov Phys (JETP) 6 1958 763
19. E.O. Kane Zener tunneling in semiconductors J Phys Chem Solids 12 1959 181 188
20. P. Price, and J. Radcliffe Esaki tunneling IBM J Res Dev 3 4 1959 364
21. W. Harrison Tunneling from an independent-particle point of view Phys Rev 123 1 1961 85 89
22. R. Stratton Theory of field emission from semiconductors Phys Rev 125 1962 67 [(c) 1962: The American Physical Society]
23. W.W. Lui, and M. Fukuma Exact solution of the Schrodinger equation across an arbitrary one-dimensional piecewise-linear potential barrier J Appl Phys 60 5 1986 1555
24. A. Schenk Rigorous theory and simplified model of the band-to-band tunneling in silicon Solid-State Electron 36 1993 19 34 (Pubitemid 23620502)
25. R.B. Fair, and H.W. Wivell Zener and avalanche breakdown in As-implanted low voltage Si n-p junctions IEEE Trans Electron Dev 23 1976 512 518
26. P.M. Solomon, J. Jopling, D.J. Frank, C. D'Emic, O. Dokumaci, and P. Ronsheim Universal tunneling behavior in technologically relevant p/n junction diodes J Appl Phys 95 10 2004 5800 5812
27. Shen C, Yang LT, Toh EH, Heng CH, Samudra GS, Yeo YC. A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET. In: International symposium on VLSI-TSA; 2009. p. 113-4.
28. A. Schenk Physical models for semiconductor device simulation R. Helbig, Festkorperprobleme. Advances in Solid State Physics vol. 36 1996 Springer Berlin/Heidelberg 245 263
29. Peng J, Haddad S, Hsu J, Chen J, Longcor S, Chang C. Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model. In: 1995 4th International conference on solid-state and integrated circuit technology; 1995. p. 141-3.
30. Ieong M, Solomon P, Laux S, Wong H. Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model. In: Electron devices meeting; 1998. p. 733-6.
31. Z. Huang, T. Feuchtwang, P. Cutler, and E. Kazes Wentzel-Kramers- Brillouin method in multidimensional tunneling Phys Rev A 41 1 1990 32 41
32. M. Razavy Quantum theory of tunneling 2003 World Scientific
33. Gong D, Zhang XH, Shen C. http://gss-tcad.sf.net .
34. C. Shen, S.L. Ong, C.H. Heng, G.S. Samudra, and Y.C. Yeo A variational approach to the two-dimensional non-linear Poisson's equation for the modeling of tunneling transistors IEEE Electron Dev Lett 29 2008 1252 1255
35. J. Knoch, and J. Appenzeller Tunneling phenomena in carbon nanotube field-effect transistors Phys Status Solidi (A) 205 4 2008 679 694
36. J. Krieger Theory of electron tunneling in semiconductors with degenerate band structure Ann Phys 36 1966 1 60
37. Laux S. Computation of complex band structures in bulk and confined structures. In: 13th International workshop on computational electronics; 2009. p. 1-4.
38. D.-Y. Ting, E. Yu, and T. McGill Multiband treatment of quantum transport in interband tunnel devices Phys Rev B 45 1992 3583 3592