Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

Applied Physics Letters

Volumn 96, Issue 21, 2010, Pages

  Marchiori, C ^a   Kiewra, E ^b   Fompeyrine, J ^a   Gerl, C ^a   Rossel, C ^a   Richter, M ^a   Locquet, J P ^c   Smets, T ^c   Sousa, M ^a   Andersson, C ^a   Webb, D J ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; GATE STACKS; IN-SITU; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOLECULAR BEAM DEPOSITION; MOSFETS; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBTHRESHOLD SLOPE;

CHEMICAL MODIFICATION; DRAIN CURRENT; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; LOGIC GATES; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

FIELD EFFECT TRANSISTORS;

EID: 77956237058     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3430572     Document Type: Article

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