Double Si nanocrystal layers grown by RPCVD for non-volatile memory applications

Semiconductor Science and Technology

Volumn 26, Issue 2, 2011, Pages

  Masarotto, L ^a   Molas, G ^a   Jalaguier, E ^a   Gay, G ^a   Colonna, J P ^a   Hartmann, J M ^a   Yckache, K ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING DYNAMICS; CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPIES; DIELECTRIC LAYER; FLOATING GATES; HIGH THERMAL; MEAN SIZE; MEMORY DEVICE; MEMORY WINDOW; NANOMETRES; NON-VOLATILE MEMORY APPLICATION; REDUCED PRESSURE-CHEMICAL VAPOUR DEPOSITION; SI NANOCRYSTAL; STORAGE DEVICES; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 79751510392     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/2/025008     Document Type: Article

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