Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 105-106

  Higashiwaki, Masataka ^a   Pei, Yi ^a   Chu, Rongmmg ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HFETS; BARRIER STRUCTURES; CARRIER CONFINEMENTS; CHARGE CONTROL; DEVICE STRUCTURES; ELECTRON DENSITIES; GATE LENGTH; HIGH POWER APPLICATIONS; HIGH-POWER AMPLIFIERS; LARGE-SIGNALS; MM-WAVE; MM-WAVE FREQUENCIES; OUTPUT CONDUCTANCE; POWER PERFORMANCE; SMALL SIGNAL;

ASPECT RATIO; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVES; POWER AMPLIFIERS; SILICON NITRIDE;

HIGH FREQUENCY AMPLIFIERS;

EID: 76549116727     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354972     Document Type: Conference Paper

References (6)

1. T.Palaciosetal., IEEE ElectronDeviceLett.26, 781 (2005).
2. Y.-F. Wu, et al., ProceedingsofIntemational Electron De vice Meeting, 405 (2007).
3. J. S. Moon, et al., IEEE Electron Device Lett. 29, 834 (2008).
4. K. Makiyama, et al., Ab stract of the International Workshop on Nitride Semiconductors, 288 (2008).
5. M. Higashiwaki, et al., Appl. Phys. Lett. 94, 053513 (2009).
6. M. Higashiwaki et al., Appl. Phys. Exp. I, 021103 (2008).