Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 623-626

  Shen, L ^a   Pei, Y ^a   McCarthy, L ^a   Poblenz, C ^a   Corrion, A ^a   Fichtenbaum, N ^a   Keller, S ^a   Denbaars, S P ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

GaN; HEMTs; Microwave power FETs; Passivation; RF dispersion; Selective etch

Indexed keywords

DRY ETCHING; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTOR DOPING;

DEVICE PERFORMANCE; MICROWAVE POWER PERFORMANCES; RF DISPERSION; SELECTIVE ETCH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748870229     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.379978     Document Type: Conference Paper

References (8)

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6. L. Shen, T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, S. P. DenBaars, J. S. Speck and U. K. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment," IEEE Electron Device Letters, vol. 27, No. 4, pp. 214-216, April 2006.
7. 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs," IEEE Electron Device Lett, vol. 23, No. 3, pp. 118-120, Mar. 2002.
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