Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2152-2154

  Yen, H H ^a,b   Kuo, H C ^a   Yeh, W Y ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD VOLTAGE; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; HOLOGRAPHIC LITHOGRAPHY; INDIUM TIN OXIDE; ITO FILMS; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; SURFACE LAYERS;

CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMITTING DIODES; LITHOGRAPHY; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONIC CRYSTALS; PLASMA ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS;

ITO GLASS;

EID: 77951232714     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778495     Document Type: Conference Paper

References (7)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687-1689 (1994).
2. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, Appl. Phys. Lett. 63, 2174-2176 (1993).
3. R. Windisch et al., IEEE Trans. Electron Devices 47, 1492-1498 (2000).
4. R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Dohler, B. Dutta, and G. Borghs, Appl. Phys. Lett. 74, 2256-2258 (1999).
5. S. M. Pan, R. C. Tu, Y. M Fan, R. C. Yeh, and J. T. Hsu, IEEE Photo. Tech. Lett. 15, 649-651 (2003).
6. C. C. Yang, R. H. Horng, C. E. Lee, W. Y. Lin, K. F. Pan, Y. Y. Su, and D. S. Wuu, Jpn. J. Appl. Phys. 44, 2525-2527 (2005).
7. J. M. Lee, S. H. Oh, C. W. Lee, H. Ko, S. Park, K. S. Kim, and M. H. Park, Electrochem. Solid-State Lett. 7(1), G11-G13 (2004).