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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 A, 2003, Pages

X-ray analysis of twist and tilt of GaN prepared by facet-controlled epitaxial lateral overgrowth (FACELO)

(5) Iyechika, Yasushi a,c Shimizu, Masaya a Maeda, Takayoshi a,d Miyake, Hideto b Hiramatsu, Kazumasa b

a SUMITOMO CHEMICAL CO LTD (Japan)

b MIE UNIVERSITY (Japan)

c ASEC Inc (Japan)

d TOTTORI UNIVERSITY (Japan)

Author keywords

Dislocation density; Facet controlled epitaxial lateral overgrowth (FACELO); GaN; Metalorganic vapor phase epitaxy (MOVPE); Symmetric and asymmetric reflections; X ray analysis

Indexed keywords

EPITAXIAL GROWTH; LIGHT REFLECTION; LUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

DISLOCATION DENSITY;

GALLIUM NITRIDE;

EID: 0042866041 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l732 Document Type: Article

Times cited : (8)

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