SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

Vanishing critical thickness in asymmetric ferroelectric tunnel junctions: First principle simulations

(4) Cai, Meng Qiu a Zheng, Yue a Ma, Pui Wai a Woo, C H a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; DENSITY-FUNCTIONAL CALCULATIONS; DEPOLARIZATION FIELDS; ELECTRONIC ENVIRONMENTS; FERROELECTRIC BARRIERS; FERROELECTRIC POLARIZATION; FERROELECTRIC TUNNEL JUNCTIONS; FIRST PRINCIPLE SIMULATION; FIRST-PRINCIPLES; FURTHER DEVELOPMENT; LIMITING FACTORS; REMNANT POLARIZATIONS; TUNNELING JUNCTIONS;

CAPACITORS; CHARGE TRANSFER; DEPOLARIZATION; ELECTRIC FIELDS; ELECTRODES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; ION EXCHANGE; PLATINUM; TUNNEL JUNCTIONS;

FERROELECTRICITY;

EID: 79551677535 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3532000 Document Type: Article

Times cited : (35)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.