Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

  Özben, E Durǧun ^a   Lopes, J M J ^a,c   Nichau, A ^a   Luptak R ^a   Lenk, S ^a   Besmehn, A ^a   Bourdelle, K K ^b   Zhao, Q T ^a   Schubert, J ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTROSTATIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; INTERFACE STATES; LANTHANUM COMPOUNDS; LUTETIUM COMPOUNDS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PERMITTIVITY; RARE EARTHS; SILICATES; SILICON ON INSULATOR TECHNOLOGY; STRAINED SILICON; TERBIUM COMPOUNDS; TIN OXIDES; TITANIUM NITRIDE; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROSTATIC CONTROL; FULLY DEPLETED; FULLY DEPLETED SILICON ON INSULATOR (SOI); INVERSE SUBTHRESHOLD SLOPES; OXIDE THICKNESS; RARE EARTH OXIDE; SILICATE FORMATION; TRANSISTOR PERFORMANCE;

MOSFET DEVICES;

EID: 79551647089     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3533760     Document Type: Conference Paper

References (20)

1. M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, IEEE Spectrum 0018-9235 44, 29 (2007). 10.1109/MSPEC.2007.4337663 (Pubitemid 47570274)
2. International Technology Roadmap for Semiconductors, 2008.
3. J. -P. Colinge, Silicon-on-Insulator Technology, 3rd ed. (Springer, London, 2004).
4. C. K. Maiti, S. Chattopadhyay, and L. K. Bera, Strained-Si Heterostructure Field Effect Devices (Taylor & Francis, New York, 2007).
5. D. G. Schlom, S. Guha, and S. Datta, MRS Bull. 0883-7694 33, 1017 (2008).
6. J. Robertson, J. Appl. Phys. 0021-8979 104, 124111 (2008). 10.1063/1.3041628
7. J. M. J. Lopes, Microelectron. Eng. 0167-9317 86, 1646 (2009). 10.1016/j.mee.2009.03.065
8. E. Durǧun Özben, J. M. J. Lopes, M. Roeckerath, St. Lenk, B. Holländer, Y. Jia, D. G. Schlom, J. Schubert, and S. Mantl, Appl. Phys. Lett. 0003-6951 93, 052902 (2008). 10.1063/1.2968660
9. H. Wang, J. -J. Wang, R. Gordon, J. -S. M. Lehn, H. Li, D. H, and D. V. Shenai, Electrochem. Solid-State Lett. 1099-0062 12, G13 (2009). 10.1149/1.3074314
10. M. Roeckerath, J. M. J. Lopes, E. Durǧun Ozben, C. Sandow, S. Lenk, T. Heeg, J. Schubert, and S. Mantl, Appl. Phys. A: Mater. Sci. Process. 0947-8396 94, 521 (2009). 10.1007/s00339-008-4962-8
11. K. Romanjek, F. Andrieu, T. Ernst, and G. Ghibaudo, Solid-State Electron. 0038-1101 49, 721 (2005). 10.1016/j.sse.2004.08.019 (Pubitemid 40340020)
12. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. -J. King, and C. Hu, Proc. IEEE 0018-9219 (2000).
13. G. Hyvert, T. Nguyen, L. Militaru, A. Poncet, and C. Plossu, Mater. Sci. Eng., B 0921-5107 165, 129 (2009). 10.1016/j.mseb.2009.02.016
14. G. Ghibaudo, Electron. Lett. 0013-5194 24, 543 (1988). 10.1049/el:19880369
15. S. F. Feste, Th. Schäpers, D. Buca, Q. T. Zhao, J. Knoch, M. Bouhassoune, Arno Schindlmayr, and S. Mantl, Appl. Phys. Lett. 0003-6951 95, 182101 (2009). 10.1063/1.3254330
16. O. Bonno, S. Barraud, F. Andrieu, D. Mariolle, F. Rochette, M. Casś, J. M. Hartmann, F. Bertin, and O. Faynot, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 134, (2007).
17. K. Kakushima, Microelectron. Eng. 0167-9317 50, 356 (2010).
18. J. H. Sim, S. C. Song, P. D. Kirsch, C. D. Young, R. Choi, D. L. Kwong, B. H. Lee, and G. Bersuker, Microelectron. Eng. 0167-9317 80, 218 (2005). 10.1016/j.mee.2005.04.071 (Pubitemid 40753083)
19. V. Narayanan, IEEE Electron Device Lett. 0741-3106 27, 591 (2006). 10.1109/LED.2006.876312 (Pubitemid 43970031)
20. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier, and M. Chudzik, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2003, 793.