Photoreflectance spectroscopy of the band bending and the energy gap for Mg-doped InN layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Kudrawiec, R ^a   Suski, T ^b   Misiewicz, J ^a   Muto, D ^c   Nanishi, Y ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; ENERGY RANGES; FERMI LEVEL PINNING; FRANZ-KELDYSH OSCILLATIONS; INN LAYERS; MG CONCENTRATIONS; MG-DOPED; MG-DOPING; PHOTOREFLECTANCE SPECTROSCOPY; SAMPLE SURFACE;

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON MOBILITY; SECONDARY BATTERIES; SOLIDS;

ENERGY GAP;

EID: 79251640677     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880849     Document Type: Article

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