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Microelectronics Journal

Volumn 32, Issue 8, 2001, Pages 673-678

Permittivity of amorphous hydrogenated carbon (a-C:H) films as a function of thermal annealing

(4) Balachova, O V a Swart, J W a Braga, E S a Cescato, L a

a UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

Amorphous hydrogenated carbon; Annealing; C V characterization; Permittivity

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CARBON; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; HYDROGENATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SUBSTRATES;

AMORPHOUS HYDROGENATED CARBON FILMS;

SEMICONDUCTING FILMS;

EID: 0035426955 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(01)00030-1 Document Type: Article

Times cited : (5)

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